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    Group III-V wide band gap semiconductor particularly GaN received a great deal of attention in th...

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    The reliable and well controlled electrical contacts are needed for the successful operation of a...

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    Gallium nitride (GaN) metal-insulator-semiconductor (MIS) are very attractive because of their ad...

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  4. Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
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    In recent years, group III-V semiconductors have drawn considerable attention because they are te...

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    Metal-Semiconductor contacts play an important role in the fabrication of devices based on the II...

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  6. Electrical Properties of n-GaN based MOS type Schottky Junctions
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    III-nitride semiconductor materials, specially gallium nitride (GaN), have attracted significantl...

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  7. Studies on Electrical Properties of GaN based MIS Type Schottky Device
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    Group III-V Nitride semiconductors, especially gallium nitride (GaN), are very promising material...

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